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STUD616S 데이터시트(PDF) 2 Page - SamHop Microelectronics Corp.

부품명 STUD616S
상세설명  Super high dense cell design for low RDS(ON).
PDF  8 Pages
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제조업체  SAMHOP [SamHop Microelectronics Corp.]
홈페이지  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STUD616S 데이터시트(HTML) 2 Page - SamHop Microelectronics Corp.

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Symbol
Min
Typ
Max
Units
BVDSS
60
V
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V,ID=250uA
STU/D616S
Ver1.1
www.samhop.com.tw
Feb,12,2010
2
1
IGSS
±10
uA
VGS(th)
1
V
64
gFS
13.5
S
CISS
780
pF
COSS
58.5
pF
CRSS
46.5
pF
Qg
14
nC
13
38
9.4
tD(ON)
13.5
ns
tr
ns
tD(OFF)
ns
tf
ns
VDS=20V,VGS=0V
SWITCHING CHARACTERISTICS
VDD=30V
ID=1A
VGS=10V
RGEN=6ohm
Total Gate Charge
Rise Time
Turn-Off DelayTime
VDS=30V,ID=8A,VGS=10V
Fall Time
Turn-On DelayTime
m ohm
VGS=10V , ID=8A
VDS=5V,ID=8A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
IDSS
A
Gate Threshold Voltage
VDS=VGS ,ID=250uA
VDS=48V , VGS=0V
VGS=±20V,VDS=0V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Reverse Transfer Capacitance
ON CHARACTERISTICS
a
3
VGS=4.5V , ID=6A
77
81
99
m ohm
b
f=1.0MHz
b
VSD
nC
Qgs
nC
Qgd
1.88
3.71
Gate-Drain Charge
Gate-Source Charge
Diode Forward Voltage
VDS=30V,ID=8A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=1.5A
0.8
1.3
V
Notes
a.Pulse Test:Pulse Width < 300us, Duty Ctcle < 2%.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=0.5mH,RG=25
Ω,IAS=9A,VDD <V(BR)DSS.(See Figure13)
e.Pulse Test : Pulse Width < 1us,Duty Cycle < 1%.
_
_
_
IS
Maximum Continuous Drain-Source Diode Forward Current
1.5
A
VDS=30V,ID=8A,VGS=4.5V
nC
1.8
6.7
BVDSS
Drain-Source Breakdown Voltage
e
VGS=0V , ID=10mA
65
V



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