| 전자부품 데이터시트 검색엔진 |
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HFP640G 데이터시트(PDF) 4 Page - SemiHow Co.,Ltd. |
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HFP640G 데이터시트(HTML) 4 Page - SemiHow Co.,Ltd. |
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4 / 8 page ![]() Typical Characteristics (continued) t 2 t 1 P DM 25 50 75 100 125 150 0 4 8 12 16 20 T C, Case Temperature [ 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 10 s 100 ms DC 10 ms 1 ms 100 s Operation in This Area is Limited by R DS(on) * Notes : 1. T C = 25 oC 2. T J = 150 oC 3. Single Pulse V DS, Drain-Source Voltage [V] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature Figure 11. Transient Thermal Response Curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 * Note : 1. V GS = 0 V 2. I D = 250 A T J, Junction Temperature [ oC] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 Note : 1. V GS = 10 V 2. I D = 9 A T J, Junction Temperature [ oC] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * Notes : 1. Z JC(t) = 1.3 oC/W Max. 2. Duty Factor, D=t 1/t2 3. T JM - TC = PDM * Z JC(t) single pulse D=0.5 0.02 0.2 0.05 0.1 0.01 t 1, Square Wave Pulse Duration [sec] |
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