HFS4N90 datasheet(3/7 Pages) SEMIHOW

부품명	HFS4N90

상세설명	Superior Avalanche Rugged Technology

PDF	7 Pages

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iss = Cgs + Cgd (Cds = shorted)

oss = Cds + Cgd

rss = Cgd

* Notes :

1. V

GS = 0 V

2. f = 1 MHz

rss

oss

iss

DS, Drain-Source Voltage [V]

Typical Characteristics

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

DS, Drain-Source Voltage [V]

GS, Gate-Source Voltage [V]

SD, Source-Drain voltage [V]

DS = 450V

DS = 180V

DS = 720V

* Note : I

D = 4.0A

G, Total Gate Charge [nC]

024

GS = 20V

GS = 10V

Note : T

J = 25

D, Drain Current [A]

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