| 전자부품 데이터시트 검색엔진 |
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HFS5N70S 데이터시트(PDF) 3 Page - SemiHow Co.,Ltd. |
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HFS5N70S 데이터시트(HTML) 3 Page - SemiHow Co.,Ltd. |
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3 / 7 page ![]() V DS, Drain-Source Voltage [V] Typical Characteristics 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 25 oC 150 oC * Note : 1. V GS = 0V 2. 250 s Pulse Test V SD , Source-Drain Voltage [V] 246 8 10 10 -1 10 0 10 1 * Note 1. V DS = 50V 2. 250 s Pulse Test -55 oC 150 oC 25 oC V GS , Gate-Source Voltage [V] 10 -1 10 0 10 1 0 200 400 600 800 1000 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd * Note ; 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 02 46 8 10 0 2 4 6 8 * Note : T J = 25 oC V GS = 20V V GS = 10V I D , Drain Current [A] 02 468 10 12 0 2 4 6 8 10 12 Q G, Total Gate Charge [nC] * Note : I D = 4.0A V DS = 350V V DS = 140V V DS = 560V |
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