HFS8N70S datasheet(3/7 Pages) SEMIHOW

부품명	HFS8N70S

상세설명	Superior Avalanche Rugged Technology

PDF	7 Pages

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제조업체	SEMIHOW [SemiHow Co.,Ltd.]

홈페이지	http://www.semihow.com

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GS, Gate-Source Voltage [V]

Typical Characteristics

0.2

0.4

0.6

0.8

1.0

1.2

-1

150

Note :

1. V

GS = 0V

2. 250 s Pulse Test

SD, Source-Drain voltage [V]

0.5

1.0

1.5

2.0

2.5

GS = 20V

GS = 10V

Note : T

J = 25

D, Drain Current [A]

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

DS, Drain-Source Voltage [V]

1216

2024

G, Total Gate Charge [nC]

DS = 130V

DS = 325V

DS = 520V

* Note : I

D=7.0A

VDS=140V

VDS=350V

VDS=560V

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