| 전자부품 데이터시트 검색엔진 |
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HFS8N80 데이터시트(PDF) 4 Page - SemiHow Co.,Ltd. |
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HFS8N80 데이터시트(HTML) 4 Page - SemiHow Co.,Ltd. |
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4 / 7 page ![]() Typical Characteristics (continued) 1.0 1.1 1.2 1.0 1.5 2.0 2.5 3.0 Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature -100 -50 0 50 100 150 200 0.8 0.9 Notes : 1. V GS = 0 V 2. I D = 250 A T J, Junction Temperature [ oC] -100 -50 0 50 100 150 200 0.0 0.5 * Notes : 1. V GS = 10 V 2. I D = 4.0 A T J , Junction Temperature [ oC] 4 6 8 10 0 10 1 10 2 10 s DC 10 ms 1 ms 100 s Operation in This Area is Limited by R DS(on) Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current CT t 25 50 75 100 125 150 0 2 T C , Case Temperature [ oC] 10 0 10 1 10 2 10 3 10 -2 10 -1 Notes : 1. T C = 25 oC 2. T J = 150 o C 3. Single Pulse V DS, Drain-Source Voltage [V] vs Case Temperature 10 0 N o te s : 1 . Z JC (t ) = 2 . 2 5 / W M a x . 2 . D u ty F a c t o r , D = t 1 /t 2 3 . T JM - T C = P DM * Z JC (t) D= 0 .5 0.2 00 5 0.1 Fi 11 T i t Th l R C t 2 t 1 P DM 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 JM C DM JC s ing le puls e 0.02 0 .05 0.01 t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] Figure 11. TransientThermalResponse Curve |
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