WFF8N60 datasheet(4/6 Pages) WISDOM

4 / 6 page

HIGH VOLTAGE

N-Channel MOSFET

Rev.A0,August , 2010 |

Typical Characteristics (Continued)

-2

-1

µs

100 ms

10 ms

1 ms

100

µs

OperationinThisArea

isLimitedbyR

DS(on)

Notes:

※

1. T

C = 25

2. T

J = 150

3. SinglePulse

DS, Drain-Source Voltage [V]

Figure 10. Maximum Drain Current

vs Case Temperature

Figure 7. Breakdown Voltage Variation

vs Temperature

Figure 8. On-Resistance Variation

vs Temperature

Figure 9-2. Maximum Safe Operating Area

for WFF8N60

-100

-50

100

150

200

0.8

0.9

1.0

1.1

1.2

Notes:

※

1. V

GS =0V

2. I

D =250µ A

J, Junction Temperature [

oC]

-100

-50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

Notes :

※

1. V

GS = 10 V

2. I

D = 4 A

J, Junction Temperature [

oC]

100

125

150

C, Case Temperature [

]

℃

-5

-4

-3

-2

-1

-2

-1

No te s :

※

1 . Z

θ JC (t ) = 2 .6

/W M a x .

℃

2 . D u ty F a c to r, D = t

1/t2

3 . T

JM - T C = P DM * Z θ JC (t)

s ingle p u ls e

D= 0 .5

0.0 2

0.2

0.0 5

0.1

0.0 1

1 , S quar e W a v e P u l s e D u r a t ion [ s e c ]

Figure 11-2. Transient Thermal Response Curve for WFF8N60

PDM

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