HFS730U datasheet(3/8 Pages) SEMIHOW

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Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

-1

200

400

600

800

1000

1200

iss = Cgs + Cgd (Cds = shorted)

oss = Cds + Cgd

rss = Cgd

* Note ;

1. V

GS = 0 V

2. f = 1 MHz

rss

oss

iss

DS, Drain-Source Voltage [V]

2468

0.1

-25

* Notes :

1. V

DS= 30V

2. 300us Pulse Test

GS, Gate-Source Voltage [V]

150

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

100

* Notes :

1. V

GS= 0V

2. 300us Pulse Test

SD, Source-Drain Voltage [V]

150

-1

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

Bottom : 5.0 V

* Notes :

1. 300us Pulse Test

2. T

C = 25

DS, Drain-Source Voltage [V]

Typical Characteristics

DS = 200V

DS = 80V

DS = 320V

Note : I

D = 6.0A

G, Total Gate Charge [nC]

0.0

0.5

1.0

1.5

2.0

2.5

GS = 20V

GS = 10V

Note : T

J = 25

D, Drain Current [A]

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