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DMN5L06K 데이터시트(PDF) 2 Page - Diodes Incorporated

부품명 DMN5L06K
상세설명  N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  6 Pages
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제조업체  DIODES [Diodes Incorporated]
홈페이지  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN5L06K 데이터시트(HTML) 2 Page - Diodes Incorporated

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DMN5L06K
Document number: DS30929 Rev. 8 - 2
2 of 6
www.diodes.com
March 2014
© Diodes Incorporated
DMN5L06K
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain Source Voltage
VDSS
50
V
Gate-Source Voltage
VGSS
20
V
Drain Current (Note 5)
Continuous
Pulsed (Note 6)
ID
300
800
mA
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
PD
350
mW
Thermal Resistance, Junction to Ambient
RθJA
357
C/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150
C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
50
V
VGS = 0V, ID = 10μA
Zero Gate Voltage Drain Current
@ TC = +25°C
IDSS
60
nA
VDS = 50V, VGS = 0V
Gate-Body Leakage
IGSS
1
500
50
μA
nA
nA
VGS = ±12V, VDS = 0V
VGS = ±10V, VDS = 0V
VGS = ±5V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(th)
0.49
1.0
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS(ON)




3.0
2.5
2.0
Ω
VGS = 1.8V, ID = 50mA
VGS = 2.5V, ID = 50mA
VGS = 5.0V, ID = 50mA
On-State Drain Current
ID(ON)
0.5
1.4
A
VGS = 10V, VDS = 7.5V
Forward Transconductance
|Yfs|
200
mS
VDS =10V, ID = 0.2A
Source-Drain Diode Forward Voltage
VSD
0.5
1.4
V
VGS = 0V, IS = 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
50
pF
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
25
pF
Reverse Transfer Capacitance
Crss
5.0
pF
Notes:
5. Device mounted on FR-4 PCB
6. Pulse width
10mS, Duty Cycle 1%.
7. Short duration pulse test used to minimize self-heating effect.



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