2N6605

2N6606

2N6607

2N6608

SILICON CONTROLLED RECTIFIER

0.35 AMP, 30 THRU 200 VOLTS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N6605 Series

types are hermetically sealed silicon controlled

rectifiers manufactured in a TO-18 case, designed for

control systems and sensing circuit applications.

MARKING: FULL PART NUMBER

TO-18 CASE

MAXIMUM RATINGS: (TC=25°C)

SYMBOL

2N6605

2N6606

2N6607

2N6608 UNITS

Peak Repetitive Off-State Voltage

VDRM, VRRM

30

60

100

200

V

Average On-State Current

IO

0.35

A

Peak One Cycle Surge Current (t=8.3ms)

ITSM

6.0

A

Peak Gate Voltage

VGM

8.0

V

Operating Junction Temperature

TJ

-40 to +125

°C

Storage Temperature

Tstg

-40 to +150

°C

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

IDRM

Rated VDRM, RGK=1.0KΩ

120

nA

IRRM

Rated VRRM

250

nA

IGT

VD=6.0V, RL=100Ω

200

μA

VGT

VD=6.0V, RL=100Ω

0.8

V

VTM

IT=2.0A

2.0

V

IH

RGK=1.0KΩ

5.0

mA

R0 (30-March 2011)

www.centra lsemi.com