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ZTX853 데이터시트(PDF) 2 Page - Diodes Incorporated

부품명 ZTX853
상세설명  NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR
PDF  3 Pages
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제조업체  DIODES [Diodes Incorporated]
홈페이지  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZTX853 데이터시트(HTML) 2 Page - Diodes Incorporated

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NPN SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ISSUE 3 - NOVEMBER 1995
FEATURES
* 100 Volt VCEO
* 4 Amps continuous current
* Up to 10 Amps peak current
* Very low saturation voltage
*Ptot=1.2 Watts
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
200
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
6V
Peak Pulse Current
ICM
10
A
Continuous Collector Current
IC
4A
Practical Power Dissipation*
Ptotp
1.58
W
Power Dissipation at Tamb=25°C
Ptot
1.2
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
200
300
V
IC=100µA
Collector-Emitter Breakdown
Voltag
V(BR)CER
200
300
V
IC=1µA, RB ≤1KΩ
Collector-Emitter Breakdown
Voltage
V(BR)CEO
100
120
V
IC=10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO
68
V
IE=100µA
Collector Cut-Off Current
ICBO
50
1
nA
µ
A
VCB=150V
VCB=150V, Tamb=100°C
Collector Cut-Off Current
ICER
R ≤1KΩ
50
1
nA
µ
A
VCB=150V
VCB=150V, Tamb=100°C
Emitter Cut-Off Current
IEBO
10
nA
VEB=6V
Collector-Emitter Saturation
Voltage
VCE(sat)
14
100
160
50
150
200
mV
mV
mV
IC=0.1A, IB=5mA
IC=2A, IB=100mA
IC=4A, IB=400mA*
Base-Emitter
Saturation Voltage
VBE(sat)
960
1100
mV
IC=4A, IB=400mA*
E-Line
TO92 Compatible
ZTX853
3-297
C
B
E
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Base-Emitter
Turn-On Voltage
VBE(on)
830
950
V
IC=4A, VCE=2V*
Static Forward
Current Transfer
Ratio
hFE
100
100
50
20
200
200
100
30
300
IC=10mA, VCE=2V
IC=2A, VCE=2V*
IC=4A, VCE=2V*
IC=10A, VCE=2V*
Transition Frequency
fT
130
MHz
IC=100mA, VCE=10V
f=50MHz
Output Capacitance
Cobo
35
pF
VCB=10V, f=1MHz
Switching Times
ton
toff
50
1650
ns
ns
IC=1A, IB!=100mA
IB2=100mA, VCC=10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX.
UNIT
Thermal Resistance: Junction to Ambient
Junction to Case
Rth(j-amb)
Rth(j-case)
150
50
°C/W
°C/W
ZTX853
-40
2.0
1.0
0.0001
50
150
100
Derating curve
T -Temperature (°C)
Maximum transient thermal impedance
Pulse Width (seconds)
10
100
1
0.1
0.01
4.0
3.0
-20
0
20 40
60 80 100 120
200
180
160
140
t1
tP
D=t1/tP
Case
te
m
peratu
re
Ambien
t tem
peratur
e
D.C.
D=0.6
D=0.2
D=0.1
Single Pulse
0.001
0
D=0.05
3-298



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