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RFPD3020 데이터시트(PDF) 2 Page - RF Micro Devices |
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RFPD3020 데이터시트(HTML) 2 Page - RF Micro Devices |
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2 / 3 page ![]() 2 of 3 RFPD3020 DS121115 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. Nominal Operating Parameters Absolute Maximum Ratings Parameter Rating Unit RF Input Voltage (single tone) 60 dBmV DC Supply Over-Voltage (5 minutes) 30 V Storage Temperature -40 to +100 °C Operating Mounting Base Temperature -30 to +100 °C Parameter Specification Unit Condition Min. Typ. Max. Overall VB = 24V; TMB = 30°C; ZS = ZL = 75 Power Gain 21.0 21.7 22.0 dB f = 45MHz 22.5 23.5 24.5 dB f = 1600MHz Slope[1] 0.5 1.0 2.5 dB f = 45MHz to 1600MHz Flatness of Frequency Response 1.3 dB Input Return Loss -20 dB f = 45MHz to 320MHz -18 dB f = 320MHz to 640MHz -16 dB f = 640MHz to 870MHz -15 dB f = 870MHz to 1200MHz -14 dB f = 1200MHz to 1600MHz Output Return Loss -20 dB f = 45MHz to 320MHz -19 dB f = 320MHz to 640MHz -18 dB f = 640MHz to 870MHz -13 dB f = 870MHz to 1200MHz -10 dB f = 1200MHz to 1600MHz Noise Figure 3.0 4.0 dB f = 50MHz to 1600MHz Total Current Consumption (DC) 420.0 450.0 mA Distortion Data 45MHz to 550MHz VB = 24V; TMB = 30°C; ZS = ZL = 75 CTB[3] -77 -74 dBc VO = 56.4dBmV at 1000MHz, 13.4dB extrapolated tilt, 79 analog channels plus 75 digital channels (-6dB offset)[2] XMOD[4] -71 -68 dBc CSO[5] -71 -68 dBc CIN[6] 63 66 dB Notes: 1. The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency. 2. 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +43dBmV to +50dBmV tilted output level, plus 75 digital channels, -6dB offset relative to the equivalent analog carrier. 3. Composite triple beat (CTB) is defined by the NCTA. 4. Cross modulation (XMOD) is measured at baseband (selective voltmeter method), referenced to 100% modulation of the carrier being tested. 5. Composite second order (CSO) (both sum and difference products) is defined by the NCTA. 6. Carrier to intermodulation noise (CIN) is defined by ANSI/SCTE 17 (Test procedure for carrier to noise). Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. RoHS (Restriction of Hazardous Substances): Compliant per EU Directive 2002/95/EC. |
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