ZXMC4559DN8

Document number: DS34498 Rev. 7- 2

2 of 11

www.diodes.com

March 2014

© Diodes Incorporated

ZXMC4559DN8

Characteristic

Symbol

Value_Q2

Value_Q1

Units

Drain-Source Voltage

60

-60

V

Gate-Source Voltage

±20

±20

V

SteadyState

(Note 5)

3.6

-2.6

A

t<10s

(Note 6)

4.7

-3.9

A

Maximum Body Diode Forward Current at t<10s (Note 6)

3.4

-3.2

A

Pulsed Drain Current (300µs pulse, duty cycle = 2%)

22.2

-18.3

A

Pulsed Source Current (Body Diode) (300µs pulse, duty cycle = 2%)

22.2

-18.3

A

Characteristic

Symbol

Value

Units

Power Dissipation

Linear Derating Factor (Note 5)

1.25

10

W

mW/°C

Power Dissipation

Linear Derating Factor (Note 6)

2.1

17

W

mW/°C

Thermal Resistance, Junction to Ambient (Note 5)

100

°C/W

Thermal Resistance, Junction to Ambient (Note 6)

58

Operating and Storage Temperature Range

-55 to +150

°C