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RF3833 데이터시트(PDF) 1 Page - RF Micro Devices |
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RF3833 데이터시트(HTML) 1 Page - RF Micro Devices |
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1 / 10 page ![]() RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS140121 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. RF MICRO DEVICES ® and RFMD® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc. 1 of 10 PRELIMINARY RF3833 25W GaN Wide-Band Power Amplifier 30MHz to 2000MHz The RF3833 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios, and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain, and large instantaneous bandwidth in a single amplifier design. The RF3833 is an input matched GaN transistor packaged in an air cavity copper package which provides excellent thermal stability through the use of advanced heat-sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of optimized input matching network within the package that provides wideband gain and power performance in a single amplifier. An external output match offers the flexibility of further optimizing power and efficiency for any sub-band within the overall bandwidth. Functional B Functional Block Diagram Ordering Information RF3833S2 Sample bag with 2 pieces RF3833SB Bag with 5 pieces RF3833SQ Bag with 25 pieces RF3833SR Short Reel with 100 pieces RF3833TR7 7" Reel with 750 pieces RF3833PCBA-410 Evaluation Board: 30MHz to 2000MHz; 48V operation Package: Air-Cavity Cu Features ■ Advanced GaN HEMT Technology ■ Output Power of 25W ■ Advanced Heat-Sink Technology ■ 30MHz to 2000MHz Instantaneous Bandwidth ■ Input Internally Matched to 50 Ω ■ 48V Operation Typical Performance POUT 44.5dBm Gain 11.5dB Power Added Efficiency 50% (30MHz to 2000MHz) ■ -40°C to 85°C Operating Temperature ■ Large Signal Models Available ■ EAR99 Export Control Applications ■ Class AB Operation for Public Mobile Radio ■ Power Amplifier Stage for Commercial Wireless Infrastructure ■ General Purpose Tx Amplification ■ Test and Instrumentation ■ Civilian and Military Radar RF3833 |
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