RF Micro Devices Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421

DS140204

For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.

RF MICRO DEVICES

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RFHA1027

500W GaN Wide-Band Pulsed Power Amplifier

The RFHA1027 is a 50V 500W high power discrete amplifier

designed for L-Band pulsed radar, air traffic control and

surveillance and general purpose broadband amplifiers

applications. Using an advanced high power density Gallium

Nitride (GaN) semiconductor process, these high performance

amplifiers achieve high output power, high efficiency and flat gain

over a broad frequency range in a single package. The

RFHA1027 is a matched power transistor packaged in a hermetic,

flanged ceramic package. The package provides excellent thermal

stability through the use of advanced heat-sink and power

dissipation technologies. Ease of integration is accomplished

through the incorporation of single, optimized matching networks

that provide wideband gain and power performance in a single

amplifier.

Functional Block Diagram

Ordering Information

RFHA1027S2

Sample bag with 2 pieces

RFHA1027SB

Bag with 5 pieces

RFHA1027SQ

Bag with 25 pieces

RFHA1027SR

7” short reel with 50 pieces

RFHA1027TR13

13” reel with 250 pieces

RFHA1027PCBA-410

Fully Assembled Evaluation Board Optimized for

1.2GHz to1.4GHz; 50V

Package: Flanged Ceramic, 2 pin

Features

■

Wideband Operation:

1.2GHz to1.4GHz

■

Advanced GaN HEMT Technology

■

Advanced Heat-Sink Technology

■

Optimized Evaluation Board

Layout for 50

Ω Operation

■

Integrated Matching Components

for High Terminal Impedances

■

50V Operation Typical

Performance



Output Pulsed Power 500W



Pulse Width 1ms,

Duty Cycle 10%



Small Signal Gain 16dB



High Efficiency 55%



-40°C to 85°C Operation

Temperature

Applications

■

Radar

■

Air Traffic Control and Surveillance

■

General Purpose Broadband

Amplifiers

RFHA1027

RFHA1027