Features

1 of 6

Optimum Technology

Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

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Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

InP HBT

LDMOS

RF MEMS

SGA1263Z

DCto4000MHz SILICON GERMANIUM HBT

CASCADABLE GAIN BLOCK

RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar

Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain

response for application to 4GHz. This RFIC is a 2-stage design that pro-

vides high isolation of up to 40dB at 2GHz and is fabricated using the lat-

drift over 125°C operating range (-40°C to +85°C) and are ideal for use

as buffer amplifiers in oscillator applications covering

cellular, ISM, and narrowband PCS bands.

-8 0

-6 0

-4 0

-2 0

0

dB

Frequency MHz

Isolation vs. Frequency



DCto4000MHz Operation



Single Supply Voltage



Excellent Isolation, >50dB at

900MHz



50

 In/Out, Broadband

Match for Operation from DC-

4GHz



Unconditionally Stable

Applications



Buffer Amplifier for Oscillator

Applications



Broadband Gain Blocks



IF Amp

DS111011



Package: SOT-363

SGA1263Z

DCto4000MH

z Silicon Ger-

manium HBT

Cascadable

Gain Block

Parameter

Specification

Unit

Condition

Min.

Typ.

Max.

Small Signal Gain

15

17

19

dB

850MHz

12

15

17

dB

1950MHz

Output Power at 1dB Compression

-13.0

-9.5

dBm

1950MHz

Output Third Order Intercept Point

-1.5

1.0

dBm

1950MHz

Determined by Return Loss (<-10dB)

MHz

Input Return Loss

9.5

11.2

dB

1950MHz

Output Return Loss

7

8

dB

1950MHz

Noise Figure

2.5

4.0

dB

1950MHz

Device Voltage

2.5

2.8

3.1

V

Thermal Resistance

255

°C/W