Features

1 of 6

Optimum Technology

Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

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Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

RF MEMS

SGA5263Z

DC to 4500MHz, Silicon Germanium

Cascadable Gain Block

The SGA5263Z is a high performance SiGe HBT MMIC Amplifier. A Darling-

excellent thermal performance. The heterojunction increases breakdown

voltage and minimizes leakage current between junctions. Cancellation of

emitter junction non-linearities results in higher suppression of intermodu-

lation products. Only two DC-blocking capacitors, a bias resistor, and an

optional RF choke are required for operation.

0

5

10

15

0.1

1

1.9

2.8

3.7

4.6

5.5

25C

-40C

85C

Small Signal Gain vs. Frequency

Frequency GHz



DC to 4500MHz Operation



Single Voltage Supply



Low Current Draw: 60mA at

3.4V Typ.



High Output Intercept:

29dBm Typ. at 1950MHz

Applications



Oscillator Amplifiers



Broadband Gain Block



IF/RF Buffer Amplifiers

DS121011



Package: SOT-363

SGA5263ZDC

to 4500MHz,

Silicon Germa-

nium Cascad-

able Gain

Block

Parameter

Specification

Unit

Condition

Min.

Typ.

Max.

Small Signal Gain

12.0

13.3

14.6

dB

850MHz

12.6

dB

1950MHz

12.3

dB

2400MHz

Output Power at 1dB Compression

16.3

dBm

850MHz

15.0

dBm

1950MHz

14.0

dBm

2400MHz

Third Order Intercept Point

32.5

dBm

29.3

dBm

27.3

dBm

4500

MHz

Minimum 10dB Return Loss (typ.)

Input VSWR

1.2:1

1950MHz

Output VSWR

1.4:1

1950MHz

Reverse Isolation

18.3

dB

850MHz

19.2

dB

1950MHz

19.5

dB

2400MHz

Noise Figure

4.0

dB

1950MHz

Device Operating Voltage

3.4

V

Device Operating Current

54

60

66

mA

Thermal Resistance

(Junction - Lead)

255

°C/W