RFHA1101D datasheet(4/8 Pages) RFMD

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RF Micro Devices Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421

DS131025

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The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of

third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended

application circuitry and specifications at any time without prior notice.

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RFHA1101D

1Typical Performance at 2.14GHz When Matched to a Match Point Located Midway Between

Points of Maximum Gain and Maximum Efficiency

[2] Test Conditions: CW Operation, f = 2140MHz, VDSQ = 28V, IDQ = 44.4mA, TAMBIENT = 25ºC, measured with probes on-wafer, in

Maury Microwave Load Pull Test System.

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