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RFHA3944 데이터시트(PDF) 2 Page - RF Micro Devices |
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RFHA3944 데이터시트(HTML) 2 Page - RF Micro Devices |
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2 / 11 page ![]() RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 DS131024 For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com. RF MICRO DEVICES ® and RFMD® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc. 2 of 11 Absolute Maximum Ratings Parameter Rating Unit Drain Voltage (VD) 150 V Gate Voltage (VG) -8 to +2 V Gate Current (IG) 30 mA Operational Voltage 50 V Ruggedness (VSWR) 10:1 Storage Temperature Range -65 to +125 °C Operating Temperature Range (TL) -40 to +85 °C Operating Junction Temperature (TJ) 250 °C Human Body Model Class 1B MTTF (TJ < 200°C, 95% Confidence Limits)* 3.2E + 06 Hours MTTF (TJ < 250°C, 95% Confidence Limits)* 5.3E + 04 Hours Thermal Resistance, Rth (junction to case) measured at TC = 85°C, DC bias only 1.7 °C/W Caution! ESD sensitive device. RoHS (Restriction of Hazardous Substances): Compliant per EU Directive 2011/65/EU. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. * MTTF – median time to failure for wear-out failure mode (30% I DSS degradation) which is determined by the technology process reliability. Refer to product qualification report for FIT (random) failure rate. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table above. Bias Conditions should also satisfy the following expression: PDISS < (TJ – TC) / RTH J-C and TC = TCASE Nominal Operating Parameters Parameter Specification Unit Condition Min Typ Max Recommended Operating Conditions Drain Voltage (VDSQ) 28 48 V Gate Voltage (VGSQ) -1.5 -0.9 -0.4 V Drain Bias Current (IDSQ) 540 mA Frequency of Operation DC 4000 GHz DC Function Test IG(OFF) – Gate Leakage 0.02 mA VG = -8V, VD = 0V ID(OFF) – Drain Leakage 0.2 mA VG = -8V, VD = 48V VGS(TH) – Threshold Voltage -1.4 V VD = 48V, ID = 20mA VDS(ON) – Drain Voltage at High Current 0.75 V VG = 0V, ID = 1.5A |
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