Features

1 of 9

Optimum Technology

Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

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Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

InP HBT

SGL0163Z

100MHz to 1300MHz SILICON GERMANIUM

CASCADABLE LOW NOISE AMPLIFIER

The SGL0163Z is a high performance SiGe HBT MMIC low noise amplifier

featuring one-micron emitters with FT up to 50GHz. This device has an

internal temperature compensation circuit permitting operation directly

from supply voltages as low as 2.5V. The SGL0163Z has been character-

two DC-blocking capacitors, a bias resistor, and an optional RF choke are

required for operation from 800MHz to 1300MHz.

RF In

RF Out / V

S

V

S

Temperature

Compensation

Circuit



Internally Matched to 50



800MHz to 1300MHz



High Input/Output Intercept



Low Noise Figure: 1.2dB Typ.

at 900MHz



Low Power Consumption



Single Voltage Supply Opera-

tion



Internal Temperature Com-

pensation

Applications



Receivers, GPS, RFID



Cellular, Fixed Wireless, Land

Mobile

DS111011



Package: SOT-363

SGL0163Z

100MHz to

1300MHz Sili-

con Germa-

nium

Cascadable

Low Noise

Amplifier

Parameter

Unit

Condition

Min.

Typ.

Max.

Min.

Typ.

Max.

Small Signal Gain

15.7

16.6

dB

800MHz

14.0

15.5

17.0

15.8

dB

900MHz

14.1

15.0

dB

1000MHz

Output Power at 1dB Compres-

sion

4.4

9.9

dBm

800MHz

3.2

5.2

10.1

dBm

900MHz

5.6

10.5

dBm

1000MHz

Input Third Order Intercept

Point

Tone Spacing=1MHz

5.3

12.1

dBm

800MHz

5.0

7.0

13.4

dBm

900MHz

9.0

14.8

dBm

1000MHz

Noise Figure

1.1

1.6

dB

1.2

1.7

1.7

dB

1.2

1.7

dB

Input Return Loss

10.0

12.5

15.7

dB

900MHz

Output Return Loss

11.5

15.6

17.6

dB

900MHz

Reverse Isolation

20.9

20.9

dB

900MHz

Device Current

9.5

12.0

14.0

23

mA

Thermal Resistance

255

°C/W