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010714 Rev1 JAS

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Device Selection Guide

Model Number

Chip

Material

Emitting Color

PLBTE3014-YDCW

InGaN

Cool White

PLBTE3014-YDNW

Natural White

PLBTE3014-YDWW

Warm White

Notes:

1. PLBTE3014-YDCW – 6530K ± 510K / 22~24lm / CRI>70

2. PLBTE3014-YDNW – 3985K ± 200K / 22~24lm / CRI>70

3. PLBTE3014-YDWW – 3045K ± 175K / 22~24lm / CRI>70

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Rating

Unit

Power Dissipation

270

mW

Continuous Forward Current

90

mA

Pulse Forward Current

120

mA

Reverse Voltage

Vr

5

V

Operating Temperature

Topr

-40~+85

°C

Storage Temperature

Tstg

-40~+85

°C

Junction Temperature

Tj

110

°C

Solder Temperature

Ts

260 for 10sec

°C

Electrical and Optical Characteristics at Ta=25°C

Notes:

1.(LM) ±10%Luminous Flux (LM)10%

2.VF ±0.1 Forward Voltage(VF)±0.1V

3.(X,Y)±0.01 Wavelength(X,Y)±0.01 (CCT±5%)

4.(CRI)±0.2 Color Rendering Index(CRI)±2

5.(2θ1/2)±5 Viewing angle(2θ1/2)±5

Parameter

Symbol

Min.

Typ.

Max.

Unit

Condition

Forward Voltage

VF

2.8

3.2

3.4

V

IF=60mA

Luminous Flux

20

22

22

Lm

IF=60mA

Color Rendering Index

CRI

70

--

--

nm

IF=60mA

Reverse Current

IR

--

--

10

μA

VR=5V

Color Temperature

CCT

2870

3045/3985/6530

7040

°K

IF=60mA

Viewing Angle

2θ1/2

--

120°

--

Deg

IF=60mA

Thermal Resistance

Rθjs

45

°C/W

IF=60mA

Antistatic ability

ESD

HBM

-4000V

MM

-3000V