| 전자부품 데이터시트 검색엔진 |
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IRF7904PBF 데이터시트(PDF) 1 Page - International Rectifier |
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IRF7904PBF 데이터시트(HTML) 1 Page - International Rectifier |
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1 / 10 page ![]() www.irf.com 1 07/10/06 IRF7904PbF HEXFET® Power MOSFET Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating l Improved Body Diode Reverse Recovery l 100% Tested for RG l Lead-Free Applications l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoles and Set-Top Box VDSS ID 30V Q1 16.2m :@V GS = 10V 7.6A Q2 10.8m :@V GS = 10V 11A RDS(on) max Absolute Maximum Ratings Parameter Q1 Max. Q2 Max. Units V DS Drain-to-Source Voltage V VGS Gate-to-Source Voltage I D @ TA = 25°C Continuous Drain Current, V GS @ 10V 7.6 11 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 6.1 8.9 A I DM Pulsed Drain Current c 61 89 PD @TA = 25°C Power Dissipation 1.4 2.0 W P D @TA = 70°C Power Dissipation 0.9 1.3 Linear Derating Factor 0.011 0.016 W/°C T J Operating Junction and °C TSTG Storage Temperature Range Thermal Resistance Parameter Q1 Max. Q2 Max. Units RθJL Junction-to-Drain Lead g 20 20 °C/W RθJA Junction-to-Ambient fg 90 62.5 ± 20 30 -55 to + 150 SO-8 T ÃÃ9! T ÃÃ9! 9 B B! T! T ÃÃ9! T! PD - 96919B |
유사한 부품 번호 - IRF7904PBF_15 |
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유사한 설명 - IRF7904PBF_15 |
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