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P4C107 데이터시트(PDF) 2 Page - Pyramid Semiconductor Corporation

부품명 P4C107
상세설명  ULTRA HIGH SPEED 1M x 1 STATIC CMOS RAM
PDF  8 Pages
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제조업체  PYRAMID [Pyramid Semiconductor Corporation]
홈페이지  http://www.pyramidsemiconductor.com
Logo PYRAMID - Pyramid Semiconductor Corporation

P4C107 데이터시트(HTML) 2 Page - Pyramid Semiconductor Corporation

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P4C107 - ULTRA HIGH SPEED 1M X 1 STATIC CMOS RAM
Page 2
Document # SRAM139 REV OR
DC ELECTRICAL CHARACTERISTICS
(Over Recommended Operating Temperature & Supply Voltage)(2)
Sym Parameter
Value
Unit
V
CC
Power Supply Pin with
Respect to GND
-0.5 to +6
V
V
TERM
Terminal Voltage with
Respect to GND (up to
6.0V)
-0.5 to V
CC + 0.5
V
T
A
Operating Temperature
-55 to +125
°C
T
BIAS
Temperature Under Bias
-55 to +125
°C
T
STG
Storage Temperature
-65 to +150
°C
P
T
Power Dissipation
1.0
W
I
OUT
DC Output Current
50
mA
MAxIMUM RATIngS(1)
RECOMMEnDED OPERATIng COnDITIOnS
grade(2)
Ambient Temp
gnD
V
CC
Commercial
0°C to +70°C
0V
5.0V ± 10%
Industrial
-40°C to +85°C
0V
5.0V ± 10%
CAPACITAnCES(4)
(V
CC = 5.0V, TA = 25°C, f = 1.0MHz)
Sym
Parameter
Conditions Typ Unit
C
IN
Input Capacitance
V
IN=0V
7
pF
C
OUT
Output Capacitance
V
OUT=0V
10
pF
Sym Parameter
Test Conditions
Min
Max
Unit
V
IH
Input High Voltage
2.2
V
CC + 0.5
V
V
IL
Input Low Voltage
-0.5(3)
0.8
V
V
OL
Output Low Voltage (TTL
Load)
I
OL = +8 mA, VCC = Min
0.4
V
V
OH
Output High Voltage (TTL
Load)
I
OH = -4 mA, VCC = Min
2.4
V
I
LI
Input Leakage Current
V
CC = Max,
V
IN = GND to VCC
-5
+5
µA
I
LO
Output Leakage Current
V
CC = Max, CE = VIH,
V
OUT = GND to VCC
-5
+5
µA
I
CC
Operating Supply Current
V
CC = Max, IOUT=0 mA, f=Max
150
mA
I
SB
Standby Power Supply
Current (TTL Input Levels)
CE ≥ V
IH, VCC = Max, f = Max,
Outputs Open
50
mA
I
SB1
Standby Power Supply
Current (CMOS Input
Levels)
CE ≥ V
HC, VCC = Max, f = 0,
Outputs Open
V
IN ≤ VLC or VIN ≥ VHC
3
mA
N/A = Not applicable



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