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P4C1281-35JM 데이터시트(PDF) 6 Page - Pyramid Semiconductor Corporation |
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P4C1281-35JM 데이터시트(HTML) 6 Page - Pyramid Semiconductor Corporation |
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6 / 11 page ![]() P4C1281/P4C1282 - ULTRA HIGH SPEED 64K x 4 CMOS STATIC RAMS Page 6 Document # SRAM136 REV OR AC TEST COnDITIOnS TRUTH TABLE P4C1281 (P4C1282) Input Pulse Levels GND to 3.0V Input Rise and Fall Times 3ns Input Timing Reference Level 1.5V Output Timing Reference Level 1.5V Output Load See Figures 1 and 2 Mode CE WE I/O Power Standby H x High Z Standby Read L H D OUT Active Write L L D IN (High Z) Active Figure 1. Output Load Figure 2. Thevenin Equivalent * including scope and test fixture. note: Because of the ultra-high speed of the P4C1281 and P4C1282, care must be taken when testing this device; an inadequate setup can cause a normal functioning part to be rejected as faulty. Long high-inductance leads that cause supply bounce must be avoided by bringing the V CC and ground planes directly up to the contactor fingers. A 0.01 µF high frequency capacitor is also required between V CC and ground. To avoid signalreflections,properterminationmustbeused;forexample,a50Ωtest environment should be terminated into a 50Ω load with 1.73V (Thevenin Voltage) at the comparator input, and a 116Ω resistor must be used in series with D OUT to match 166Ω (Thevenin Resistance). |
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