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IRFHM830DPBF 데이터시트(PDF) 1 Page - International Rectifier

부품명 IRFHM830DPBF
상세설명  Compatible with Existing Surface Mount Techniques
PDF  9 Pages
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRFHM830DPBF 데이터시트(HTML) 1 Page - International Rectifier

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HEXFET® Power MOSFET
Notes
 through † are on page 9
Features and Benefits
Applications
3.3mm x 3.3mm PQFN
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
ID @ TC(Bottom) = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC(Bottom) = 100°C
Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
c
PD @TA = 25°C
Power Dissipation g
PD @ TC(Bottom) = 25°C
Power Dissipation
g
Linear Derating Factor g
W/°C
TJ
Operating Junction and
TSTG
Storage Temperature Range
-55 to + 150
2.8
0.022
37
Max.
20
40h
160
±20
30
16
40h
V
W
A
°C
• Synchronous MOSFET for Buck Converters
VDS
30
V
RDS(on) max
(@VGS = 10V)
4.3
m
Ω
Qg (typical)
13
nC
RG (typical)
1.1
Ω
ID
(@Tc(Bottom) = 25°C)
40h
A
IRFHM830DPbF
1
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
June 6, 2014
Features
Benefits
Low RDSon (
≤ 4.3mΩ)
Lower Conduction Losses
Schottky intrinsic diode with low forward voltage
Lower switching losses
Low Thermal Resistance to PCB (<3.4°C/W)
Increased Power Density
100% Rg tested
Increased Reliability
Low Profile (< 1.0mm)
results in
Increased Power Density
Industry-Standard Pinout
⇒
Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques
Easier Manufacturing
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Environmentally Friendlier
MSL1, Industrial Qualification
Increased Reliability
Form
Quantity
IRFHM830DTRPbF
PQFN 3.3mm x 3.3mm
Tape and Reel
4000
IRFHM830DTR2PBF
PQFN 3.3mm x 3.3mm
Tape and Reel
400
EOL notice # 259
Orderable part number
Package Type
Standard Pack
Note


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