| 전자부품 데이터시트 검색엔진 |
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2SC6017 데이터시트(PDF) 2 Page - ON Semiconductor |
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2SC6017 데이터시트(HTML) 2 Page - ON Semiconductor |
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2 / 10 page ![]() 2SA2169 / 2SC6017 No.8275-2/10 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Base Current IB (--)2 A Collector Dissipation PC 0.95 W Tc=25°C20 W Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current ICBO VCB=(--)40V, IE=0A (--)10 μA Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)10 μA DC Current Gain hFE VCE=(--)2V, IC=(--)1A 200 (560)700 Gain-Bandwidth Product fT VCE=(--)5V, IC=(--)1A (130)200 MHz Output Capacitance Cob VCB=(--)10V, f=1MHz (90)60 pF Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)5A, IB=(--)250mA (--290)180 (--580)360 mV Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)5A, IB=(--)250mA (--)0.93 (--)1.4 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)100μA, IE=0A (--50)100 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=∞ (--)50 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)100μA, IC=0A (--)6 V Turn-On Time ton See specified Test Circuit. (70)40 ns Storage Time tstg (650)1000 ns Fall Time tf (60)80 ns Switching Time Test Circuit Ordering Information Device Package Shipping memo 2SA2169-E TP 500pcs./bag Pb Free 2SC6017-E TP 500pcs./bag 2SA2169-TL-E TP-FA 700pcs./reel 2SC6017-TL-E TP-FA 700pcs./reel VR RB VCC=20V VBE= --5V + + 50 Ω INPUT OUTPUT RL 100 μF 470 μF PW=20 μs IB1 D.C. ≤1% IB2 IC=20IB1= --20IB2=3A For PNP, the polarity is reversed. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. |
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