| 전자부품 데이터시트 검색엔진 |
|
BD676G. 데이터시트(PDF) 3 Page - ON Semiconductor |
|
|
|||||||||||||||||||||||||||||
BD676G. 데이터시트(HTML) 3 Page - ON Semiconductor |
|
3 / 4 page ![]() BD676G, BD676AG, BD678G, BD678AG, BD680G, BD680AG, BD682G, BD682TG http://onsemi.com 3 There are two limitations on the power handling ability of a transistor average junction temperature and secondary breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; e.g., the transistor must not be subjected to greater dissipation than the curves indicate. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown. Figure 3. Darlington Circuit Schematic BASE PNP BD676G, BD676AG BD678G, BD678AG BD680G, BD680AG BD682G, BD682TG COLLECTOR EMITTER [ 8.0 k [ 120 ORDERING INFORMATION Device Package Shipping BD676G TO−225 (Pb−Free) 500 Units / Box BD676AG TO−225 (Pb−Free) 500 Units / Box BD678G TO−225 (Pb−Free) 500 Units / Box BD678AG TO−225 (Pb−Free) 500 Units / Box BD680G TO−225 (Pb−Free) 500 Units / Box BD680AG TO−225 (Pb−Free) 500 Units / Box BD682G TO−225 (Pb−Free) 500 Units / Box BD682TG TO−225 (Pb−Free) 50 Units / Rail |
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |