MS75N075 datasheet(3/4 Pages) BWTECH

부품명	MS75N075

상세설명	Improved dv/dt Capability, High Ruggedness

PDF	4 Pages

Scroll/Zoom	100%

제조업체	BWTECH [Bruckewell Technology LTD]

홈페이지	http://www.bruckewell-semi.com

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3 / 4 page

MS75N75

75V N-Channel MOSFET

Publication Order Number: [MS75N75]

Source-Drain Diode Maximum Ratings and Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

Continuous Source-Drain Diode Forward Current

ISM

ISM Pulsed Source-Drain Diode Forward Current

300

VSD

Source-Drain Diode Forward Voltage

IS = 75 A , VGS = 0 V

1.5

trr

Reverse Recovery Time

IS = 75 A , VGS = 0 V

diF/dt=100A/μs

Qrr

Reverse Recovery Charge

250

μC

Notes:

1. Repeativity rating : pulse width limited by junction temperature

2. L = 0.32mH, IAS =75A, VDD = 25V, RG = 25Ω , Starting TJ = 25°C

3. ISD ≤ 75A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%

5. Essentially independent of operating temperature.

MS75N075 데이터시트(PDF) 3 Page - Bruckewell Technology LTD