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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRFS4010PBF 데이터시트(PDF) 1 Page - International Rectifier |
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IRFS4010PBF 데이터시트(HTML) 1 Page - International Rectifier |
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1 / 10 page  07/07/11 www.irf.com 1 HEXFET® Power MOSFET Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits S D G PD - 96186A IRFS4010PbF IRFSL4010PbF GD S Gate Drain Source D S G D2Pak IRFS4010PbF S D G D TO-262 IRFSL4010PbF VDSS 100V RDS(on) typ. 3.9m : max. 4.7m : ID 180A Absolute Maximum Ratings Symbol Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current c PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V dv/dt Peak Diode Recovery e V/ns TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy d mJ IAR Avalanche Current c A EAR Repetitive Avalanche Energy f mJ Thermal Resistance Symbol Parameter Typ. Max. Units RθJC Junction-to-Case jk ––– 0.40 RθJA Junction-to-Ambient (PCB Mount) i ––– 40 Max. 180 127 720 375 31 -55 to + 175 ± 20 2.5 °C/W °C 318 See Fig. 14, 15, 22a, 22b, 300 |
유사한 부품 번호 - IRFS4010PBF |
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유사한 설명 - IRFS4010PBF |
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