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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRFS7440PBF 데이터시트(PDF) 3 Page - International Rectifier |
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IRFS7440PBF 데이터시트(HTML) 3 Page - International Rectifier |
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3 / 12 page  3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 19, 2014 IRFS7440PbF/IRFSL7440PbF S D G Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 88 ––– ––– S Qg Total Gate Charge ––– 90 135 nC Qgs Gate-to-Source Charge ––– 23 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 32 ––– Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 58 ––– td(on) Turn-On Delay Time ––– 24 ––– ns tr Rise Time –––68––– td(off) Turn-Off Delay Time ––– 115 ––– tf Fall Time ––– 68 ––– Ciss Input Capacitance ––– 4730 ––– pF Coss Output Capacitance ––– 680 ––– Crss Reverse Transfer Capacitance ––– 460 ––– Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 845 ––– Coss eff. (TR) Effective Output Capacitance (Time Related) ––– 980 ––– Diode Characteristics Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 208 A (Body Diode) ISM Pulsed Source Current ––– ––– 772 A (Body Diode)Ãd VSD Diode Forward Voltage ––– 0.9 1.3 V dv/dt Peak Diode Recovery f ––– 6.8 ––– V/ns trr Reverse Recovery Time ––– 24 ––– ns TJ = 25°C VR = 34V, –––28––– TJ = 125°C IF = 100A Qrr Reverse Recovery Charge ––– 17 ––– nC TJ = 25°C di/dt = 100A/μs g –––20––– TJ = 125°C IRRM Reverse Recovery Current ––– 1.3 ––– A TJ = 25°C Conditions VDS = 10V, ID = 100A VGS = 0V, VDS = 0V to 32V i VGS = 0V, VDS = 0V to 32V h VDS =20V ƒ = 1.0 MHz TJ = 175°C, IS = 100A, VDS = 40V ID = 100A ID = 30A RG = 2.7Ω VGS = 10V g VDD = 20V ID = 100A, VDS =0V, VGS = 10V TJ = 25°C, IS = 100A, VGS = 0V g integral reverse p-n junction diode. MOSFET symbol showing the Conditions VGS = 10V g VGS = 0V VDS = 25V |
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