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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRG4PC30KDPBF 데이터시트(PDF) 2 Page - International Rectifier |
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IRG4PC30KDPBF 데이터시트(HTML) 2 Page - International Rectifier |
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2 / 11 page  IRG4PC30KDPbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) 67 100 IC = 16A Qge Gate - Emitter Charge (turn-on) 11 16 nC VCC = 400V See Fig.8 Qgc Gate - Collector Charge (turn-on) 25 37 VGE = 15V td(on) Turn-On Delay Time 60 tr Rise Time 42 TJ = 25°C td(off) Turn-Off Delay Time 160 250 IC = 16A, VCC = 480V tf Fall Time 80 120 VGE = 15V, RG = 23Ω Eon Turn-On Switching Loss 0.60 Energy losses include "tail" Eoff Turn-Off Switching Loss 0.58 mJ and diode reverse recovery Ets Total Switching Loss 1.18 1.6 See Fig. 9,10,14 tsc Short Circuit Withstand Time 10 µs VCC = 360V, TJ = 125°C VGE = 15V, RG = 10Ω , VCPK < 500V td(on) Turn-On Delay Time 58 TJ = 150°C, See Fig. 11,14 tr Rise Time 42 IC = 16A, VCC = 480V td(off) Turn-Off Delay Time 210 VGE = 15V, RG = 23Ω, tf Fall Time 160 Energy losses include "tail" Ets Total Switching Loss 1.69 mJ and diode reverse recovery LE Internal Emitter Inductance 13 nH Measured 5mm from package Cies Input Capacitance 920 VGE = 0V Coes Output Capacitance 110 pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance 27 = 1.0MHz trr Diode Reverse Recovery Time 42 60 ns TJ = 25°C See Fig. 80 120 TJ = 125°C 14 IF = 12A Irr Diode Peak Reverse Recovery Current 3.5 6.0 ATJ = 25°C See Fig. 5.6 10 TJ = 125°C 15 VR = 200V Qrr Diode Reverse Recovery Charge 80 180 nC TJ = 25°C See Fig. 220 600 TJ = 125°C 16 di/dt = 200Aµs di(rec)M/dt Diode Peak Rate of Fall of Recovery 180 A/µs TJ = 25°C See Fig. During tb 160 TJ = 125°C 17 Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 V VGE = 0V, IC = 250µA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage 0.54 V/°C VGE = 0V, IC = 1.0mA VCE(on) Collector-to-Emitter Saturation Voltage 2.21 2.7 IC = 16A VGE = 15V 2.88 V IC = 28A See Fig. 2, 5 2.36 IC = 16A, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 6.0 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage -12 mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance 5.4 8.1 S VCE = 100V, IC = 16A ICES Zero Gate Voltage Collector Current 250 µAVGE = 0V, VCE = 600V 2500 VGE = 0V, VCE = 600V, TJ = 150°C VFM Diode Forward Voltage Drop 1.4 1.7 V IC = 12A See Fig. 13 1.3 1.6 IC = 12A, TJ = 150°C IGES Gate-to-Emitter Leakage Current ±100 nAVGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ns ns |
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