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PCP1208 데이터시트(PDF) 2 Page - ON Semiconductor

부품명 PCP1208
상세설명  Bipolar Transistor
PDF  7 Pages
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PCP1208 데이터시트(HTML) 2 Page - ON Semiconductor

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PCP1208
No.1836-2/7
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Collector Cutoff Current
ICBO
VCB=100V, IE=0A
1
μA
Emitter Cutoff Current
IEBO
VEB=4V, IC=0A
1
μA
DC Current Gain
hFE
VCE=5V, IC=100mA
200
560
Gain-Bandwidth Product
fT
VCE=10V, IC=100mA
120
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz
9
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=0.35A, IB=35mA
115
200
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=0.35A, IB=35mA
0.82
1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=10μA, IE=0A
220
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, RBE=∞
200
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=10μA, IC=0A
8
V
Turn-On Time
ton
See specified Test Circuit.
50
ns
Storage Time
tstg
2
μs
Fall Time
tf
70
ns
Switching Time Test Circuit
RB
VCC=100V
IC=10IB1= --10IB2=0.3A
+
50Ω
INPUT
OUTPUT
RL
820μF
PW=50μs
IB1
D.C.≤1%
IB2



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