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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRGP4063DPBF 데이터시트(PDF) 2 Page - International Rectifier |
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IRGP4063DPBF 데이터시트(HTML) 2 Page - International Rectifier |
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2 / 11 page  2 www.irf.com © 2013 International Rectifier March 15, 2013 IRGP4063DPbF/IRGP4063D-EPbF Notes: VCC = 80% (VCES), VGE = 20V, L = 200μH, RG = 10Ω. This is only applied to TO-247AC package. Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V (BR)CES safely. Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ——V VGE = 0V, IC = 150μA f CT6 ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage —0.30— V/°C VGE = 0V, IC = 1mA (25°C-175°C) CT6 —1.65 2.14 IC = 48A, VGE = 15V, TJ = 25°C 5,6,7 VCE(on) Collector-to-Emitter Saturation Voltage — 2.0 — V IC = 48A, VGE = 15V, TJ = 150°C 9,10,11 —2.05— IC = 48A, VGE = 15V, TJ = 175°C VGE(th) Gate Threshold Voltage 4.0 — 6.5 V VCE = VGE, IC = 1.4mA 9, 10, ΔVGE(th)/ΔTJ Threshold Voltage temp. coefficient — -21 — mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C) 11, 12 gfe Forward Transconductance — 32 — S VCE = 50V, IC = 48A, PW = 80μs ICES Collector-to-Emitter Leakage Current — 1.0 150 μA VGE = 0V, VCE = 600V — 450 1000 VGE = 0V, VCE = 600V, TJ = 175°C VFM Diode Forward Voltage Drop — 1.95 2.91 V IF = 48A 8 —1.45— IF = 48A, TJ = 175°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Ref.Fig Qg Total Gate Charge (turn-on) — 95 140 IC = 48A 24 Qge Gate-to-Emitter Charge (turn-on) — 28 42 nC VGE = 15V CT1 Qgc Gate-to-Collector Charge (turn-on) — 35 53 VCC = 400V Eon Turn-On Switching Loss — 625 1141 IC = 48A, VCC = 400V, VGE = 15V CT4 Eoff Turn-Off Switching Loss — 1275 1481 μJ RG = 10 Ω, L = 200μH, LS = 150nH, TJ = 25°C Etotal Total Switching Loss — 1900 2622 Energy losses include tail & diode reverse recovery td(on) Turn-On delay time — 60 78 IC = 48A, VCC = 400V, VGE = 15V CT4 tr Rise time — 40 56 ns RG = 10 Ω, L = 200μH, LS = 150nH, TJ = 25°C td(off) Turn-Off delay time — 145 176 tf Fall time — 35 46 Eon Turn-On Switching Loss — 1625 — IC = 48A, VCC = 400V, VGE=15V 13, 15 Eoff Turn-Off Switching Loss — 1585 — μJ RG=10 Ω, L=200μH, LS=150nH, TJ = 175°C fà CT4 Etotal Total Switching Loss — 3210 — Energy losses include tail & diode reverse recovery WF1, WF2 td(on) Turn-On delay time — 55 — IC = 48A, VCC = 400V, VGE = 15V 14, 16 tr Rise time — 45 — ns RG = 10 Ω, L = 200μH, LS = 150nH CT4 td(off) Turn-Off delay time — 165 — TJ = 175°C WF1 tf Fall time — 45 — WF2 Cies Input Capacitance — 3025 — pF VGE = 0V 23 Coes Output Capacitance — 245 — VCC = 30V Cres Reverse Transfer Capacitance — 90 — f = 1.0Mhz TJ = 175°C, IC = 192A 4 RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp =600V CT2 Rg = 10 Ω, VGE = +15V to 0V SCSOA Short Circuit Safe Operating Area 5 — — μs VCC = 400V, Vp =600V 22, CT3 Rg = 10 Ω, VGE = +15V to 0V WF4 Erec Reverse Recovery Energy of the Diode — 845 — μJ TJ = 175°C 17, 18, 19 trr Diode Reverse Recovery Time — 115 — ns VCC = 400V, IF = 48A 20, 21 Irr Peak Reverse Recovery Current — 40 — A VGE = 15V, Rg = 10 Ω, L =200μH, Ls = 150nH WF3 Conditions |
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