MGA-425P8 datasheet(2/15 Pages) AVAGO

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MGA-425P8 Absolute Maximum Ratings[1]

Absolute

Symbol

Parameter

Units

Maximum

Drain – Supply Voltage[2]

Drain Current[2]

100

diss

Total Power Dissipation [3]

0.5

in max.

RF Input Power

dBm

Channel Temperature

°C

150

STG

Storage Temperature

°C

-65 to 150

ch_b

Thermal Resistance[4]

°C/W

34.2

Notes:

1. Operation of this device above any

one of these parameters may cause per-

manent damage.

2. Assuming DC quiescent conditions.

3. Board (package belly) temperature T

B is

25°C. Derate 29 mW/°C for T

B > 133 °C.

4. Channel-to-board thermal resistance mea-

sured using 150°C Liquid Crystal Measure-

ment method.

Product Consistency Distribution Charts at 5.25 GHz, 3.3V RBias = 680Ω[5,6]

Notes:

5. Distribution data sample size is 500

samples taken from 3 different wafers and

3 different lots. Future wafers allocated

to this product may have nominal values

anywhere between the upper and lower

limits.

6. Measurements are made on production

test board, which represents a trade-off

between optimal OIP3, P1dB, Gain and

VSWR. Circuit losses have been de-embed-

ded from actual measurements.

OIP3 (dBm)

Figure 1. OIP3;

LSL = 29 dBm, Nominal = 32.9 dBm.

150

120

Stdev = 0.9

-3 Std

GAIN (dB)

Figure 2. GAIN;

LSL = 14.5 dB, Nominal = 16 dB, USL= 17.5 dB.

14.8

15.3

15.8

16.3

16.8

17.3

180

150

120

Stdev = 0.28

-3 Std

+3 Std

P1dB (dBm)

Figure 4. P1dB;

LSL = 18.25 dBm, Nominal = 20.3 dBm.

18.3

19.3

20.3

21.3

22.3

240

200

160

120

Stdev = 0.46

-3 Std

PAE (%)

Figure 5. PAE;

LSL = 33.5 %, Nominal = 47 %.

180

150

120

Stdev = 3

-3 Std

IDS (mA)

Figure 3. IDS;

LSL = 51 mA, Nominal = 58 mA, USL = 65 mA.

250

200

150

100

Stdev = 1.22

-3 Std

+3 Std

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