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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRGS4630DPBF 데이터시트(PDF) 1 Page - International Rectifier |
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IRGS4630DPBF 데이터시트(HTML) 1 Page - International Rectifier |
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1 / 15 page  1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 18, 2014 IRGS4630DPbF IRGB4630DPbF IRGP4630D(-E)PbF Base part number Package Type Standard Pack Orderable Part Number Form Quantity Tube 50 IRGS4630DPbF IRGS4630DPbF D2Pak Tape and Reel Right 800 IRGS4630DTRRPbF Tape and Reel Left 800 IRGS4630DTRLPbF IRGB4630DPbF TO-220AB Tube 50 IRGB4630DPbF IRGP4630DPbF TO-247AC Tube 25 IRGP4630DPbF IRGP4630D-EPbF TO-247AD Tube 25 IRGP4630D-EPbF Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 47 A IC @ TC = 100°C Continuous Collector Current 30 ICM Pulse Collector Current, VGE=15V 54 ILM Clamped Inductive Load Current, VGE=20V 72 IF @ TC = 25°C Diode Continuous Forward Current 30 IF @ TC = 100°C Diode Continuous Forward Current 18 VGE Continuous Gate-to-Emitter Voltage ±20 V PD @ TC = 25°C Maximum Power Dissipation 206 W PD @ TC = 100°C Maximum Power Dissipation 103 TJ Operating Junction and -40 to +175 C TSTG Storage Temperature Range Soldering Temperature, for 10 sec. (1.6mm from case) 300 Mounting Torque, 6-32 or M3 Screw (TO-220, TO-247) 10 lbf·in (1.1 N·m) IFM Diode Maximum Forward Current 72 Transient Gate to Emitter Voltage ±30 VCES = 600V IC = 30A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 18A Applications • Appliance Drives • Inverters • UPS Features Benefits Low VCE(ON) and switching losses High efficiency in a wide range of applications and switching Square RBSOA and maximum junction temperature 175°C Improved reliability due to rugged hard switching performance and high power capability Positive VCE (ON) temperature coefficient and tight distribution of parameters Excellent current sharing in parallel operation 5µs Short Circuit SOA Enables short circuit protection scheme Lead-Free, RoHS Compliant Environmentally friendly Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode G C E Gate Collector Emitter IRGP4630D-EPbF TO-247AD IRGP4630DPbF TO-247AC E G n-channel C C E G C IRGS4630DPbF D2Pak C E G C IRGB4630DPbF TO-220AC Notes through are on page 7 C C C E G C E G |
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