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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRLML6402PBF 데이터시트(PDF) 2 Page - International Rectifier |
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IRLML6402PBF 데이터시트(HTML) 2 Page - International Rectifier |
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2 / 9 page  2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014 IRLML6402PbF Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.0A, VGS = 0V trr Reverse Recovery Time ––– 29 43 ns TJ = 25°C, IF = -1.0A Qrr Reverse RecoveryCharge ––– 11 17 nC di/dt = -100A/μs Repetitive rating; pulse width limited by max. junction temperature. Notes: Pulse width ≤ 400μs; duty cycle ≤ 2%. Source-Drain Ratings and Characteristics -1.3 -22 A S D G ** For recommended footprint and soldering techniques refer to application note #AN-994. Surface mounted on 1" square single layer 1oz. copper FR4 board, steady state. Starting TJ = 25°C, L = 1.65mH RG = 25Ω, IAS = -3.7A. Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250μA ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– -0.009 ––– V/°C Reference to 25°C, ID = -1mA ––– 0.050 0.065 VGS = -4.5V, ID = -3.7A ––– 0.080 0.135 VGS = -2.5V, ID = -3.1A VGS(th) Gate Threshold Voltage -0.40 -0.55 -1.2 V VDS = VGS, ID = -250μA gfs Forward Transconductance 6.0 ––– ––– S VDS = -10V, ID = -3.7A ––– ––– -1.0 VDS = -20V, VGS = 0V ––– ––– -25 VDS = -20V, VGS = 0V, TJ = 70°C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V Qg Total Gate Charge ––– 8.0 12 ID = -3.7A Qgs Gate-to-Source Charge ––– 1.2 1.8 nC VDS = -10V Qgd Gate-to-Drain ("Miller") Charge ––– 2.8 4.2 VGS = -5.0V td(on) Turn-On Delay Time ––– 350 ––– VDD = -10V tr Rise Time ––– 48 ––– ID = -3.7A td(off) Turn-Off Delay Time ––– 588 ––– RG = 89 Ω tf Fall Time ––– 381 ––– RD = 2.7 Ω Ciss Input Capacitance ––– 633 ––– VGS = 0V Coss Output Capacitance ––– 145 ––– pF VDS = -10V Crss Reverse Transfer Capacitance ––– 110 ––– ƒ = 1.0MHz Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS µA Ω RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current nA ns |
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