AMMC-6442 datasheet(2/8 Pages) AVAGO

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Absolute Maximum Ratings[1,2,3,4]

Symbol

Parameters

Unit

Max

Positive Supply Voltage[2]

5.5

Gate Supply Voltage

-2 to 0

Power Dissipation[2]

CW Input Power[2]

dBm

Tch

Operating Channel Temp.[3,4]

°C

+150

Tstg

Storage Case Temp.

°C

-65 to +155

Tmax

Maximum Assembly Temp (30 sec max)

°C

+260

Note:

1. Operation in excess of any one of these conditions may result in permanent damage to this device.

2. Combinations of supply voltage, drain current, input power, and output power shall not exceed PD.

3. These ratings apply to each individual FET

4. The operating channel temperature will directly affect the device MTTF. For maximum life, it is recommended that junction temperatures be

maintained at the lowest possible levels.

DC Specifications/ Physical Properties [1]

Symbol

Parameters and Test Conditions

Unit

Min

Typ

Max

Id(q)

Drain Supply Current

(Vd=5 V, Vg set for Id(q)Typical)

700

Gate Supply Operating Voltage

(Id(q) = 700 (mA))

-1.3

-1

-0.7

Tch-bs

Thermal Resistance

(Channel-to-Base Plate)

°C/W

Tch

Channel Temperature

°C

150

Note:

1. Assume die epoxied to evaluation RF module at 92.25°C base plate temperature.

RF Specifications [1, 2]

TA= 25°C, Vdd = 5.0 V, Idq =0.7 A, Vg = -1V, Zo=50

Symbol

Parameters and Test Conditions

Units

Minimum

Typical

Maximum

Freq

Operational Frequency

GHz

Gain

Small-signal Gain [2]

P-1dB

Output Power at 1dB [2] Gain Compression

dBm

IM3

Relative third Order Inter-modulation Level

'f=20MHz, Po=+18dBm, SCL

dBc

RLin

Input Return Loss

RLout

Output Return Loss

Isolation

Reverse Isolation

Note:

1. Small/Large -signal data measured at TA = 25°C.

2. 100% on wafer RF test is done at frequency= 37, 38 and 40GHz.

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