 |
전자부품 데이터시트 검색엔진 |
|
|
전자부품 데이터시트 검색엔진 |
|
IRLR3110ZPBF 데이터시트(PDF) 2 Page - International Rectifier |
|
|
|||||||||||||||||||||||||||||
IRLR3110ZPBF 데이터시트(HTML) 2 Page - International Rectifier |
|
|
2 / 11 page  IRLR/U3110ZPbF 2 www.irf.com S D G S D G Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.077 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 11 14 m Ω ––– 12 16 VGS(th) Gate Threshold Voltage 1.0 ––– 2.5 V gfs Forward Transconductance 52 ––– ––– S IDSS Drain-to-Source Leakage Current ––– ––– 20 µA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA Gate-to-Source Reverse Leakage ––– ––– -200 Qg Total Gate Charge ––– 34 48 Qgs Gate-to-Source Charge ––– 10 ––– nC Qgd Gate-to-Drain ("Miller") Charge ––– 15 ––– td(on) Turn-On Delay Time ––– 24 ––– tr Rise Time ––– 110 ––– td(off) Turn-Off Delay Time ––– 33 ––– ns tf Fall Time ––– 48 ––– LD Internal Drain Inductance ––– 4.5 ––– Between lead, nH 6mm (0.25in.) LS Internal Source Inductance ––– 7.5 ––– from package and center of die contact Ciss Input Capacitance ––– 3980 ––– Coss Output Capacitance ––– 310 ––– Crss Reverse Transfer Capacitance ––– 130 ––– pF Coss Output Capacitance ––– 1820 ––– Coss Output Capacitance ––– 170 ––– Coss eff. Effective Output Capacitance ––– 320 ––– Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 63 (Body Diode) A ISM Pulsed Source Current ––– ––– 250 (Body Diode) Ã VSD Diode Forward Voltage––– ––– 1.3 V trr Reverse Recovery Time ––– 3451ns Qrr Reverse Recovery Charge ––– 42 63 nC ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) VGS = 4.5V, ID = 32A e VGS = 16V VGS = -16V VDS = 50V VDS = 25V, ID = 38A ID = 38A Conditions VGS = 4.5V e VGS = 0V VDS = 25V ƒ = 1.0MHz VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 80V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 80V f MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 38A, VGS = 0V e TJ = 25°C, IF = 38A, VDD = 50V di/dt = 100A/µs e Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 38A e VDS = VGS, ID = 100µA VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125°C VGS = 4.5V e VDD = 50V ID = 38A RG = 3.7 Ω |
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Korean ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
