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2SB776 데이터시트(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SB776 데이터시트(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2 / 4 page ![]() JMnic Product Specification 2 Silicon PNP Power Transistors 2SB776 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;RBE=∞ -100 V V(BR)CBO Collector-base breakdown voltage IC=-5mA ;IE=0 -120 V V(BR)EBO Emitter-base breakdown voltage IE=-5mA ;IC=0 -6 V VCEsat Collector-emitter saturation voltage IC=-4A ;IB=-0.4A -0.9 -2.0 V VBE Base-emitter on voltage IC=-1A;VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-80V IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-4V; IC=0 -0.1 mA hFE-1 DC current gain IC=-1A ; VCE=-5V 60 200 hFE-2 DC current gain IC=-4A ; VCE=-5V 20 fT Transition frequency IC=-1A ; VCE=-5V 15 MHz COB Collector output capacitance f=1MHz;VCB=10V 200 pF Switching times ton Turn-on time 0.2 μs tstg Storage time 1.2 μs tf Fall time IC=-1.0A; IB1=-IB2=-0.1A RL=20Ω;VCC=20V 0.3 μs hFE-1 Classifications D E 60-120 100-200 |
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