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STBV32A3 데이터시트(PDF) 2 Page - Cystech Electonics Corp.

부품명 STBV32A3
상세설명  High Voltage NPN Power Transistor
PDF  6 Pages
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제조업체  CYSTEKEC [Cystech Electonics Corp.]
홈페이지  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

STBV32A3 데이터시트(HTML) 2 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C827A3
Issued Date : 2007.09.20
Revised Date : 2014.09.03
Page No. : 2/6
STBV32A3
CYStek Product Specification
Absolute Maximum Ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
VCBO
700
V
Collector-Emitter Voltage
VCEO
450
V
Emitter-Base Voltage
VEBO
9
V
Collector Current (DC)
IC
1.5
A
Collector Current (Pulse)
ICM
3 (Note)
A
Base Current (DC)
IB
0.5
A
Base Current (Pulse)
IBM
1.5 (Note)
A
Power Dissipation
PD
0.6
W
Thermal Resistance, Junction to Ambient
RθJA
208
C/W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
-65~+150
C
Note : Pulse test, PW ≤ 5ms
Characteristics (Ta=25C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
700
-
-
V
IC=100μA
BVCEO
450
-
-
V
IC=10mA
BVEBO
9
-
-
V
IE=100μA
ICBO
-
-
10
μA
VCB=700V, IE=0
IEBO
-
-
10
μA
VEB=9V, IC=0
*VCE(SAT)
-
-
0.4
V
IC=500mA, IB=100mA
*VCE(SAT)
-
-
1
V
IC=1.5A, IB=500mA
*hFE 1
18
-
39
-
VCE=2V, IC=500mA
*hFE 2
5
-
35
-
VCE=2V, IC=1A
fT
4
-
-
MHz
VCE=10V, IC=100mA, f=100MHz
Cob
-
21
-
pF
VCB=10V, IE=0A, f=1MHz
ton
-
1.1
-
μs
VCC=125V, RL=125Ω,IC=1A,
IB1=-IB2=0.2A
tstg
-
-
4
tf
-
-
0.7
*Pulse Test: Pulse Width 380
μs, Duty Cycle2%



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