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10N30L-TN3-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 10N30L-TN3-R
상세설명  N-CHANNEL POWER MOSFET
PDF  4 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

10N30L-TN3-R 데이터시트(HTML) 2 Page - Unisonic Technologies

  10N30L-TN3-R Datasheet HTML 1Page - Unisonic Technologies 10N30L-TN3-R Datasheet HTML 2Page - Unisonic Technologies 10N30L-TN3-R Datasheet HTML 3Page - Unisonic Technologies 10N30L-TN3-R Datasheet HTML 4Page - Unisonic Technologies  
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10N30
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R502-738.b
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
300
V
Gate-Source Voltage
VGSS
±30
V
Drain Current
Continuous (TC=25°C)
ID
10
A
Pulsed (Note 2)
IDM
40
A
Avalanche Current (Note 2)
IAR
11
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
360
mJ
Repetitive (Note 4)
EAR
13.5
mJ
Power Dissipation
TO-220
PD
135
W
TO-251/TO-252
83
Derate above 25°C
TO-220
1.07
W/°C
TO-251/TO-252
0.66
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 5.7mH, IAS = 10.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 10.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
62.5
°C/W
Junction to Case
TO-220
θJC
0.93
°C/W
TO-251/TO-252
1.5
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
300
V
Drain-Source Leakage Current
IDSS
VDS=300V, VGS=0V
1
µA
Gate- Source Leakage Current
Forward
IGSS
VGS=+30V, VDS=0V
+100 nA
Reverse
VGS=-30V, VDS=0V
-100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=10A
0.5 0.65
Ω
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
840 1090 pF
Output Capacitance
COSS
250 325
pF
Reverse Transfer Capacitance
CRSS
80
110
pF



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