Absolute Maximum Ratings

Parameter

Units

ID @ VGS = 10V, TC = 25°C

Continuous Drain Current

17

ID @ VGS = 10V, TC = 100°C Continuous Drain Current

11

IDM

Pulsed Drain Current ➀

68

PD @ TC = 25°C

Max. Power Dissipation

35

W

Linear Derating Factor

0.28

W/°C

VGS

Gate-to-Source Voltage

±16

V

EAS

Single Pulse Avalanche Energy ➁

56

mJ

IAR

Avalanche Current ➀

11

A

EAR

Repetitive Avalanche Energy ➀

3.5

mJ

dv/dt

Peak Diode Recovery dv/dt ➂

4.3

V/ns

T J

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Package Mounting Surface Temperature

300 (for 5 s)

Weight

2.6

g

power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve the lowest possible on-resistance

per silicon unit area. This benefit, combined with the

fast switching speed and ruggedized device design

that HEXFET power MOSFETs are well known for,

provides the designer with an extremely efficient device

for use in a wide variety of applications.

These devices are well-suited for applications such

as switching power supplies, motor controls, invert-

ers, choppers, audio amplifiers and high-energy pulse

circuits.

A

LOGIC LEVEL

IRL5NJ024

SURFACE MOUNT (SMD-0.5)

7/13/01

www.irf.com

1

55V, N-CHANNEL

SMD-0.5

Product Summary

Part Number

BVDSS

IRL5NJ024

55V

0.06

Ω

17A

Features:

For footnotes refer to the last page

PD - 93955A