IRLS3813TRLPBF datasheet(2/9 Pages) IRF

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January 23, 2014

IRLS3813PbF

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min.

Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

–––

VGS = 0V, ID = 250µA

V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient

–––

––– mV/°C Reference to 25°C, ID = 1mA 

RDS(on)

Static Drain-to-Source On-Resistance

–––

1.60

1.95

 VGS = 10V, ID = 148A 

VGS(th)

Gate Threshold Voltage

1.35

–––

2.35

VDS = VGS, ID = 150µA

IDSS

Drain-to-Source Leakage Current

–––

µA

VDS =30V, VGS = 0V

–––

100

VDS =30V,VGS = 0V,TJ =125°C

IGSS

Gate-to-Source Forward Leakage

–––

100

VGS = 20V

Gate-to-Source Reverse Leakage

–––

-100

VGS = -20V

Gate Resistance

–––

0.9

–––



Notes:



Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 160A by source

bonding technology. Note that current limitations arising from heating of the device leads may occur with some lead mounting

arrangements. (Refer to AN-1140)



Repetitive rating; pulse width limited by max. junction temperature.



Limited by TJmax, starting TJ = 25°C, L = 16µH, RG = 50, IAS = 148A, VGS =10V.



ISD  148A, di/dt  865A/µs, VDD  V(BR)DSS, TJ 150°C.



Pulse width

 400µs; duty cycle  2%.



Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.



Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.



R is measured at TJ approximately 90°C.



When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to

application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf



Pulse drain current is limited at 640A by source bonding technology.

Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

gfs

Forward Transconductance

428

–––

VDS = 10V, ID =148A

Total Gate Charge

–––

ID = 148A

Qgs

Gate-to-Source Charge

–––

VDS = 15V

Qgd

Gate-to-Drain Charge

–––

VGS = 4.5V

td(on)

Turn-On Delay Time

–––

VDD = 20V

Rise Time

–––

202

–––

ID = 148A

td(off)

Turn-Off Delay Time

–––

RG= 4.5

Fall Time

–––

102

–––

VGS = 4.5V

Ciss

Input Capacitance

–––

8020

–––

VGS = 0V

Coss

Output Capacitance

–––

1250

–––

VDS = 25V

Crss

Reverse Transfer Capacitance

–––

570

–––

ƒ = 1.0MHz

Coss eff.(ER)

Effective Output Capacitance (Energy Related)

–––

1560

–––

VGS = 0V, VDS = 0V to 24V

Coss eff.(TR)

Output Capacitance (Time Related)

–––

1750

–––

VGS = 0V, VDS = 0V to 24V

Diode Characteristics

Parameter

Min.

Typ. Max. Units

Conditions

Continuous Source Current

–––

––– 247

MOSFET symbol

(Body Diode)

showing the

ISM

Pulsed Source Current

–––

––– 850

integral reverse

(Body Diode)

p-n junction diode.

VSD

Diode Forward Voltage

–––

1.3

TJ= 25°C,IS = 148A,VGS = 0V 

dv/dt

Peak Diode Recovery dv/dt

–––

2.2

–––

V/ns TJ = 150°C,IS =148A,VDS = 30V

trr

Reverse Recovery Time

–––

TJ = 25°C

VDD = 26V

–––

TJ = 125°C

IF = 148A,

Qrr

Reverse Recovery Charge

–––

TJ = 25°C

di/dt = 100A/µs 

–––

TJ = 125°C

IRRM

Reverse Recovery Current

–––

1.2

–––

TJ = 25°C



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