US301G-AE2-R datasheet(3/4 Pages) UTC

3 / 4 page

US301

Preliminary

CMOS IC

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R103-099.a



ABSOLUTE MAXIMUM RATING

PARAMETER

SYMBOL

RATINGS

UNIT

Input Voltage Relative to GND

VIN

6.5

Output Voltage Relative to GND

VOUT

VIN+0.3

Maximum Continuous Load Current

ILOAD

Internal Limited

Maximum Junction Temperature

150

°C

Storage Temperature Range (Note 4)

TSTG

-65~150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. UL Recognized Rating from -30°C~70°C (Diodes qualified TST from -65°C~150°C)



RECOMMENDED OPERATING CONDITIONS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Input voltage relative to GND

VIN

2.7

5.2

Output Current

IOUT

0.2

Operating Ambient Temperature

-40

+85

°C



ELECTRICAL CHARACTERISTICS (TA=25°C, VIN=+5.0V, unless otherwise stated)

PARAMETER

SYMBOL TEST CONDITIONS (Note 1) MIN

TYP

MAX

UNIT

Input UVLO

VUVLO

VIN rising

2.35

2.90

Input Quiescent Current

Above UVLO, IOUT=0

125

µA

Reverse Leakage Current

IREV

VIN=0V, VOUT=5V, IREV at VIN

0.01

0.10

µA

Switch On-Resistance

RDS(ON)

VIN=5V, IOUT=0.2A

100

250

350

mΩ

Over-Load Current Limit

ILIMIT

VIN=5V, VOUT=4V

0.2

0.4

0.5

Short-Circuit Current

IOS

OUT shorted to ground

0.2

0.4

0.5

Reverse-Current Trigger Point

IROCP

VIN=5.0V, VOUT=5.2V

0.20

0.25

Deglitch Time from Reverse Current Trigger

to MOSFET Turn Off

TTRIG

(Note 2)

0.5

0.7

1.0

Output Over-Voltage Trip Point

VOVP

(Note 3)

5.2

5.6

Debounce Time From Output Over-Voltage

to MOSFET Turn Off

TOVP

µs

Recovery After Turn-Off from ROCP and

OVP

VREC

101%

VIN

Output turn-on time (Note 4)

TON

CL=0.1µF, RLOAD=20Ω

(UVLO to 90% VOUT-NOM)

0.7

Thermal Shutdown Threshold

TSHDN

VIN=2.7V~5.2V

150

°C

Thermal Shutdown Hysteresis

THYS

°C

Thermal Resistance Junction-to-Ambient

(Note 5)

θJA

215

°C/W

Notes: 1. Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must

be taken into account separately.

2. When reverse current triggers at IROCP=0.20A, the reverse current is continuously clamped at IROCP for

0.7ms deglitch time until MOSFET is turned off.

3. During output over-voltage protection, the output draws approximately 60µA current.

4. Since the output turn-on slew rate is dependent on input supply slew rate, this limit is only applicable for

input supply slew rate between VIN/0.2ms to VIN/1ms.

5. Device mounted on FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout.

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