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US1651G-S08-R 데이터시트(PDF) 3 Page - Unisonic Technologies

부품명 US1651G-S08-R
상세설명  PRIMARY-SIDE REGULATION PWM POWER SWITCH
PDF  7 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

US1651G-S08-R 데이터시트(HTML) 3 Page - Unisonic Technologies

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US1651
Preliminary
CMOS IC
UNISONICTECHNOLOGIESCO.,LTD
3 of 7
www.unisonic.com.tw
QW-R129-005.a
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain Voltage (Off State)
BVDSS
-0.3~650
V
VDD Voltage
VDD
-0.3~33
V
VDDG Voltage
VDDG
-0.3~33
V
VDD Zener Clamp Continuous Current
IDD_clamp
10
mA
CS Input Voltage
VCS
-0.3~7
V
INV Input Voltage
Vinv
-0.3~7
V
Operating Junction Temperature
TJ
-20~150
°C
Storage Temperature
TSTG
-55~150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, VDD=VDDG=16V, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX
UNIT
Supply Voltage (VDD) Section
Standby Current
IDD ST
VDD=13V
5
10
μA
Operation Current
IDD op
Operation Supply Current
INV=1.25V, CS=0V, VDD=VDDG=20V
1.0
2.0
mA
VDD Under Voltage Lockout Enter
UVLO(ON)
7.5
8.5
9.5
V
VDD Under Voltage Lockout Exit
UVLO(OFF)
14.0
15
16.0
V
Over Voltage Protection Voltage
OVP(ON)
CS=0V,INV=1V Ramp up VDD Until
Gate Clock is Off
28.5
30.0
31.5
V
IDD=10mA
VDD_clamp
33
V
Current Sense Input Section
LEB Time
TLEB
1.2
μs
VTH_OC_test
Vth_oc
780
820
860
mV
Propagation Delay
Td_oc
300
ns
Input Impedance
ZSENSE_IN
50
KΩ
Soft Start Time
T_ss
4
ms
CV Section
Normal Mode Frequency
Freq
45
50
55
KHz
Burst Mode Base Frequency
Freq_Burst
22
KHz
Frequency Shuffling Range
△
f/Freq
±4
%
CC Section
Minimum frequency
12
KHz
Oscillation Frequency
Freq
Maximum frequency
50
KHz
Error Amplifier section
Reference Voltage for EA
VREF_EA
1.21
1.25
1.29
V
DC Gain of the EA
Gdc
50
dB
Unity Gain Bandwidth
GBW
37.5
kHz
Power MOSFET Section
Mos Drain-Source Breakdown
Voltage
BVDSS
650
V
Static Drain to Source On
Resistance
RDS(ON)
12
Ω
OTP SECTION
Threshold Temperature of OTP
(Note)
TOTP
+150
°C



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