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CHR2295 데이터시트(PDF) 2 Page - United Monolithic Semiconductors |
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CHR2295 데이터시트(HTML) 2 Page - United Monolithic Semiconductors |
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2 / 6 page ![]() CHR2295 24-30GHz MFC Down Converter Ref.: DSCHR22951192 - 11 Jul 11 2/6 Specifications subject to change without notice Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Electrical Characteristics for Broadband Operation Tamb = +25°C, Vd = 3.5V Symbol Parameter Min Typ Max Unit FRF RF frequency range 24 30 GHz FLO LO frequency range 12 15 GHz FIF IF frequency range DC 1.5 GHz Gc Conversion gain (1) 8.5 11 dB NF Noise Figure, for IF>0.1GHz 3.5 dB PLO LO Input power 10 dBm Img Sup Image Suppression 15 17 dBc P1dB Input power at 1dB gain compression -10 dBm LO VSWR Input LO VSWR (1) 2.0:1 RF VSWR Input RF VSWR (1) 3.0:1 Id Bias current (2) 120 mA (1) On Wafer measurements (2) Current source biasing network is recommended. Optimum performances will be achieved for Idm=50mA and Idl=70mA Absolute Maximum Ratings Tamb. = 25°C (1) Symbol Parameter Values Unit Vd Drain bias voltage 4.0 V Id Drain bias current 200 mA Vg Gate bias voltage -2.0 to +0.4 V Pin Maximum peak input power overdrive (2) +15 dBm Ta Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +155 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. |
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