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UHE4913G-AE3-R 데이터시트(PDF) 3 Page - Unisonic Technologies

부품명 UHE4913G-AE3-R
상세설명  LOW POWER HALL EFFECT SWITCH
PDF  4 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UHE4913G-AE3-R 데이터시트(HTML) 3 Page - Unisonic Technologies

  UHE4913G-AE3-R Datasheet HTML 1Page - Unisonic Technologies UHE4913G-AE3-R Datasheet HTML 2Page - Unisonic Technologies UHE4913G-AE3-R Datasheet HTML 3Page - Unisonic Technologies UHE4913G-AE3-R Datasheet HTML 4Page - Unisonic Technologies  
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UHE4913
CMOS IC
UNISONICTECHNOLOGIESCO.,LTD
3 of 4
www.unisonic.com.tw
QW-R502-608.C
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Supply Voltage
VDD
5.5
V
Supply current
IQ
-1 ~ +2.5
mA
Magnetic Flux Density
B
Unlimited
mT
Junction Temperature
TJ
150
°C
Operation Temperature
TOPR
-40 ~ +85
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
RECOMMENDED OPERATING CONDITIONS (TA=25°C)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNIT
Supply Voltage
VDD
Operating
2.4
2.7
5.5
V
Output Voltage
VOUT
-0.3
2.7
5.5
V
Ambient Temperature
TA
-40
25
85
°C
ELECTRICAL CHARACTERISTICS (TA=25°C)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNIT
Output Saturation Voltage
VSAT
VDD=2.7V
0.1
V
Output Leakage Current
IOFF
0.01
μA
Supply Current
IDD(EN)
VDD=2.7V
1.1
mA
IDD(DIS)
2.5
μA
IDD(AVG)
3
20
μA
Operating Time
TOP
VDD=2.7V
50
μs
Standby Time
TSD
130
ms
Duty Cycle
D.C.
0.04
%
Output Rise Time
tR
RL=2.7KΩ,CL=10PF
0.5
1
μs
Output Fall Time
tF
RL=2.7KΩ,CL=10PF
0.1
1
μs
MAGNETIC CHARACTERISTICS ( TA=25°C,VDD=2.7V)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Operation Points
|BOP|
20
35
50
Gauss
Release Points
|BRP|
12
27
42
Hysteresis
|BOP–BRP|
2
8
16



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