FC8779G-SM1-R datasheet(3/4 Pages) UTC

3 / 4 page

FC8779

Preliminary

CMOS IC

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R502-981.a



ABSOLUTE MAXIMUM RATING

PARAMETER

SYMBOL

RATINGS

UNIT

Supply Voltage

VCC

Power Dissipation (Note 2)

585

Output Current (Note 3)

IOMAX

1000

FG Signal Output

IFG

FG Signal Output Voltage

VFG

Operating Temperature

TOPR

-40~+105

°C

Storage Temperature

TSTG

-55~+150

°C

Junction Temperature

TJMAX

150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. To use at temperature above TA=25°C reduce 4.68mW/°C (On 70.00mm×1.6mm glass epoxy board).

3. This value is mot to be over Pd, VCC=4.0V~6.0V At VCC=2.2V~4.0V, output current tolerance reduces.



OPERATING CONDITIONS

PARAMETER

SYMBOL

RATINGS

UNIT

Operating Supply Voltage Range

VCC

2.2~6.0

Hall Input Voltage Range

0.4~VCC-1.1

Notes: 1. This product is not designed for production against radioactive rays.

2. This document may be strategic data subject to COCOM regulations.



ELECTRICAL CHARACTERISTICS (Unless otherwise specified T

A=25°C, VCC=5V)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Supply Current

ICC

Input Offset Voltage

VHOFS

±6

Output Voltage

IO=250mA upper and lower total

0.32

0.49

Input-Output Gain

GIO

FG Low Voltage

VFGL

IFG=3mA

0.3

Input Hysteresis Voltage

VHYS

±5

±10

±15

Lock detection ON Time

TON

0.35

0.50

0.65

sec

Lock Detection OFF Time

TOFF

3.5

5.0

6.5

sec

Hall Bias Voltage

VHB

IHB=-5mA

1.1

1.3

1.5

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