1998 Jul 02

2

Philips Semiconductors

Product specification

HF/VHF power MOS transistor

BLF177

FEATURES

• High power gain

• Low intermodulation distortion

• Easy power control

• Good thermal stability

• Withstands full load mismatch.

APPLICATIONS

• Designed for industrial and military

applications in the HF/VHF

frequency range.

DESCRIPTION

Silicon N-channel enhancement

mode vertical D-MOS transistor

encapsulated in a 4-lead, SOT121B

flanged package, with a ceramic cap.

All leads are isolated from the flange.

A marking code, showing gate-source

for matched pair applications. Refer

to the handbook 'General' section for

further information.

PINNING

PIN

DESCRIPTION

1

drain

2

source

3

gate

4

source

PIN CONFIGURATION

CAUTION

This product is supplied in anti-static packing to prevent damage caused by

electrostatic discharge during transport and handling. For further information,

refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided

that the BeO disc is not damaged. All persons who handle, use or dispose of

this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to

the regulations applying at the location of the user. It must never be thrown

out with the general or domestic waste.

Fig.1 Simplified outline (SOT121B) and symbol.

s

d

g

MBB072

andbook, halfpage

MLA876

43

2

1

QUICK REFERENCE DATA

MODE OF

OPERATION

f

(MHz)

(V)

(W)

(dB)

(%)

(dB)

(dB)

SSB class-AB

28

50

150 (PEP)

>20

>35

<−30

<−30

CW class-B

108

50

150

typ. 19

typ. 70

−−