1996 Oct 02

2

Philips Semiconductors

Product specification

VHF power MOS transistor

BLF346

FEATURES

• High power gain

• Easy power control

• Good thermal stability

• Gold metallization ensures excellent reliability.

APPLICATIONS

• Linear amplifier applications in Television transmitters

and transposers.

DESCRIPTION

Silicon N-channel enhancement mode vertical D-MOS

transistor encapsulated in a 6-lead, SOT119 flange

package, with a ceramic cap. All leads are isolated from

the flange. A marking code, showing gate-source voltage

applications. Refer to the General Section of Data

Handbook SC19a for further information.

CAUTION

The device is supplied in an antistatic package. The

gate-source input must be protected against static

discharge during transport or handling.

PINNING-SOT119

PIN

SYMBOL

DESCRIPTION

1

s

source

2

s

source

3

g

gate

4

d

drain

5

s

source

6

s

source

Fig.1 Simplified outline and symbol.

handbook, halfpage

s

d

g

MAM268

2

4

6

5

3

1

QUICK REFERENCE DATA

RF performance in a linear amplifier.

Note

1. Three-tone test method (vision carrier

−8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to

peak synchronization level.

MODE OF

OPERATION

f

(MHz)

(V)

(A)

(

°C)

(W)

(dB)

Class-A

224.25

28

3

70

>24

>14

−52

25

typ. 30

typ. 16.5

−52

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.